Stochastic modeling of exciton transport and recombination processes in semiconductor heterostructures doped with quantum dots. Full article
| Journal |
Journal of Computational Electronics
ISSN: 1569-8025 |
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| Output data | Year: 2025, | ||||
| Tags | semiconductor heterostructure, excitons, drift-diffusion-recombination equation, quantum dots, survival probability, first passage time, random walk on spheres and layers | ||||
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| Affiliations |
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Funding (2)
| 1 | Sobolev Institute of Mathematics | FWNF-2024-0002 |
| 2 | Russian Science Foundation | 24-11-00107 |
Abstract:
In this paper a new stochastic simulation algorithm for modeling exciton transport taking into account drift, diffusion and recombination is developed. The method is meshless, and the transport problem is solved by modeling exciton trajectories that are driven by the transient drift-diffusion-recombination equations. The motion of excitons is described probabilistically. All probability distributions (survival probabilities, probabilities of transition from one state to another, probability density distributions of the first passage time, etc.) are derived from Green's functions subject to appropriate boundary conditions. We present the results of numerical simulations to evaluate the impact of semiconductor doping by quantum dots on the electronic properties of the material.
Cite:
Sabelfed K.K.
, Aksyuk I.A.
Stochastic modeling of exciton transport and recombination processes in semiconductor heterostructures doped with quantum dots.
Journal of Computational Electronics. 2025.
Stochastic modeling of exciton transport and recombination processes in semiconductor heterostructures doped with quantum dots.
Journal of Computational Electronics. 2025.
Dates:
| Submitted: | Oct 14, 2025 |
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