Abstract: The time-resolved photoluminescence in a layer of GaN with an embedded array of threading dislocations is studied. An instantaneous spatially uniform source of excitons is considered. The transport and recombination of excitons is governed by a 3D transient drift-diffusion-recombination equation with mixed Dirichlet and Robin boundary conditions on the plane surface and the cylindrical boundaries of the dislocations. We develop a stochastic simulation algorithm which solves this problem by tracking exciton trajectories. The drift of the excitions is affected by the piezoelectric elds around the dislocations. The parameters of the piezoelectric eld, the exciton’s diffusion length and its mean life time are taken from the experimental study published recently in our triple article in Physical Review Applied of 2022. The main nding in the present paper concerns the relation between the photoluminescence intensity and the dislocation density. It is shown that from a transient photoluminescence curve it is possible to extract the dislocation density with high resolution.

Cite: Sabelfeld K.K. , Kireeva A.E.
Impact of the dislocation density on the transient photoluminescence intensity in GaN semiconductors
Сибирские электронные математические известия (Siberian Electronic Mathematical Reports). 2024. V.21. N2. P.555-569. DOI: 10.33048/semi.2024.21.040 WOS Scopus РИНЦ OpenAlex

Dates:

Submitted:	Mar 10, 2024
Published print:	Aug 23, 2024
Published online:	Aug 23, 2024

Identifiers:

Web of science:	WOS:001394114300003
Scopus:	2-s2.0-85207349265
Elibrary:	82336263
OpenAlex:	W4415374295

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