Impact of the dislocation density on the transient photoluminescence intensity in GaN semiconductors Научная публикация
| Журнал |
Сибирские электронные математические известия (Siberian Electronic Mathematical Reports)
, E-ISSN: 1813-3304 |
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| Вых. Данные | Год: 2024, Том: 21, Номер: 2, Страницы: 555-569 Страниц : 15 DOI: 10.33048/semi.2024.21.040 | ||||
| Ключевые слова | photoluminescence, threading dislocations, piezoelectric field, radiative recombination, exciton's lifetime, random walk on spheres, transient drift-di usion-recombination equation | ||||
| Авторы |
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| Организации |
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Информация о финансировании (1)
| 1 |
Министерство науки и высшего образования РФ Математический центр в Академгородке (ИМ СО РАН) |
075-15-2019-1613, 075-15-2022-281 |
Реферат:
The time-resolved photoluminescence in a layer of GaN with an embedded array of threading dislocations is studied. An instantaneous spatially uniform source of excitons is considered. The transport and recombination of excitons is governed by a 3D transient drift-diffusion-recombination equation with mixed Dirichlet and Robin boundary conditions on the plane surface and the cylindrical boundaries of the dislocations. We develop a stochastic simulation algorithm which solves this problem by tracking exciton trajectories. The drift of the excitions is affected by the piezoelectric elds around the dislocations. The parameters of the piezoelectric eld, the exciton’s diffusion length and its mean life time are taken from the experimental study published recently in our triple article in Physical Review Applied of 2022. The main nding in the present paper concerns the relation between the photoluminescence intensity and the dislocation density. It is shown that from a transient photoluminescence curve it is possible to extract the dislocation density with high resolution.
Библиографическая ссылка:
Sabelfeld K.K.
, Kireeva A.E.
Impact of the dislocation density on the transient photoluminescence intensity in GaN semiconductors
Сибирские электронные математические известия (Siberian Electronic Mathematical Reports). 2024. V.21. N2. P.555-569. DOI: 10.33048/semi.2024.21.040 WOS Scopus РИНЦ OpenAlex
Impact of the dislocation density on the transient photoluminescence intensity in GaN semiconductors
Сибирские электронные математические известия (Siberian Electronic Mathematical Reports). 2024. V.21. N2. P.555-569. DOI: 10.33048/semi.2024.21.040 WOS Scopus РИНЦ OpenAlex
Даты:
| Поступила в редакцию: | 10 мар. 2024 г. |
| Опубликована в печати: | 23 авг. 2024 г. |
| Опубликована online: | 23 авг. 2024 г. |
Идентификаторы БД:
| Web of science: | WOS:001394114300003 |
| Scopus: | 2-s2.0-85207349265 |
| РИНЦ: | 82336263 |
| OpenAlex: | W4415374295 |
Цитирование в БД:
Пока нет цитирований